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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672760 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Nov. 30, 2016

Semiconductor die

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Harry-Hak-Lay Chuang, Singapore, SG;

Ming Zhu, Singapore, SG;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Hauptman Ham, LLP

Primary Examiner:

Matthew L Reames

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 21/28 (2006.01); H01L 27/07 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/28008 (2013.01); H01L 21/82385 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 27/0738 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/42372 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01);
Abstract

A method of making a semiconductor device includes etching an insulation layer to form a plurality of openings over a first region of the substrate and a plurality of openings over a second region of the substrate. The method includes filling a first opening of the plurality of openings over the first region with a first P-metal. The method includes filling a second opening of the plurality of openings over the first region with a first N-metal. An area of the first N-metal substantially differs in size from an area of the first P-metal. The method includes filling a first opening of the plurality of openings over the second region with a second P-metal. The method includes filling a second opening of the plurality of openings over the second region with a second N-metal. An area of the second N-metal differs from an area of the second P-metal.

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