The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Mar. 02, 2017
Applicant:
Tokyo Electron Limited, Minato-ku, Tokyo, JP;
Inventor:
Jozef Brcka, Austin, TX (US);
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); H01J 37/32 (2006.01); C23C 14/04 (2006.01); C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3476 (2013.01); C23C 14/046 (2013.01); C23C 14/345 (2013.01); C23C 14/3464 (2013.01); C23C 14/358 (2013.01); H01J 37/3211 (2013.01); H01J 37/32137 (2013.01); H01J 37/32183 (2013.01); H01J 37/3402 (2013.01); H01J 37/3429 (2013.01);
Abstract
Embodiments of methods and systems for an inductively coupled plasma sweeping source for an IPVD system. In an embodiment, a method includes providing a large size substrate in a processing chamber. The method may also include generating from a metal source a sputtered metal onto the substrate. Additionally, the method may include creating a high density plasma from a high density plasma source and applying the high density plasma in a sweeping operation without involving moving parts. The method may also include controlling a plurality of operating variables in order to meet one or more plasma processing objectives.