The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2020
Filed:
Jun. 14, 2018
Applicant:
Exogenesis Corporation, Billerica, MA (US);
Inventors:
Sean R. Kirkpatrick, Littleton, MA (US);
Kiet A. Chau, North Reading, MA (US);
Son T. Chau, Lynn, MA (US);
Assignee:
Exogenesis Corporation, Billerica, MA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); G03F 1/80 (2012.01); H01J 37/317 (2006.01); H01L 21/311 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); G03F 1/82 (2012.01); H05H 3/02 (2006.01); H01J 37/147 (2006.01); H01J 37/05 (2006.01); H01J 37/32 (2006.01); H01L 29/36 (2006.01); B24B 37/04 (2012.01);
U.S. Cl.
CPC ...
G03F 1/80 (2013.01); G03F 1/82 (2013.01); H01J 37/05 (2013.01); H01J 37/147 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01J 37/32816 (2013.01); H01L 21/02115 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/02274 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26566 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H05H 3/02 (2013.01); B24B 37/04 (2013.01); H01J 2237/0041 (2013.01); H01J 2237/0812 (2013.01); H01J 2237/15 (2013.01); H01L 29/36 (2013.01); Y10T 428/24355 (2015.01); Y10T 428/24479 (2015.01); Y10T 428/30 (2015.01);
Abstract
A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.