The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Oct. 16, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Min Song, Hwaseong-si, KR;

Woo Seok Park, Ansan-si, KR;

Geum Jong Bae, Suwon-si, KR;

Dong Il Bae, Seongnam-si, KR;

Jung Gil Yang, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a substrate; protruding portions extending in parallel to each other on the substrate; nanowires provided on the protruding portions and separated from each other; gate electrodes provided on the substrate and surrounding the nanowires; source/drain regions provided on the protruding portions and sides of each of the gate electrodes, the source/drain regions being in contact with the nanowires; and first voids provided between the source/drain regions and the protruding portions.


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