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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10665471 B1

PDFFull Text
Date of Patent:
May. 26, 2020

Filed:

Aug. 24, 2018

Semiconductor device and manufacturing method thereof

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Shu-Ming Li, Taichung, TW;

Tzu-Ming Ou Yang, Taichung, TW;

Ko-Po Tseng, Taichung, TW;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Thanh Y Tran

Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/28568 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 29/40114 (2019.08);
Abstract

A semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. A core structure and a first material layer are formed on a substrate in order. A top surface of the first material layer is lower than a top surface of the core structure. A second pattern is formed on an exposed surface of the core structure. The method of forming the second pattern includes forming a second material layer on the exposed surface of the core structure and the top surface of the first material layer and performing an anisotropic etching on the second material layer. The first material layer is patterned by using the second pattern as a mask to form a first pattern. The step of forming the second material layer and the step of performing an anisotropic etching on the second material layer are performed in the same etching chamber.

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