The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Mar. 19, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Shinichi Miyatake, Kanagawa, JP;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 11/4074 (2006.01); H01L 23/525 (2006.01); G11C 29/00 (2006.01); G11C 29/02 (2006.01); G11C 11/401 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 11/4074 (2013.01); G11C 17/165 (2013.01); G11C 17/18 (2013.01); G11C 29/027 (2013.01); G11C 29/785 (2013.01); G11C 29/787 (2013.01); H01L 23/5252 (2013.01); G11C 11/401 (2013.01);
Abstract
Apparatuses and methods including anti-fuses and for reading and programming same are disclosed herein. An example apparatus may include an anti-fuse element comprising first, second, and third transistors coupled in series between first and second nodes such that the second transistor is between the first and third transistors. The second transistor is configured to be operated such that a punch-through current flows through the second transistor to indicate that the anti-fuse element has been programmed.