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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10663491 B1

PDFFull Text
Date of Patent:
May. 26, 2020

Filed:

Feb. 09, 2018

Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zheng John Ye, Santa Clara, CA (US);

Jay D. Pinson, II, San Jose, CA (US);

Juan Carlos Rocha, San Carlos, CA (US);

Abdul Aziz Khaja, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan LLP

Primary Examiner:

Binu Thomas

Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); G01R 15/14 (2006.01); G01R 15/18 (2006.01); C23F 4/00 (2006.01); C23C 16/505 (2006.01); G01R 15/16 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G01R 15/181 (2013.01); C23C 16/50 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); C23F 4/00 (2013.01); G01R 15/142 (2013.01); G01R 15/144 (2013.01); G01R 15/16 (2013.01); H01J 37/3299 (2013.01); H01J 37/32174 (2013.01); H01J 37/32477 (2013.01); H01J 37/32559 (2013.01); H01J 37/32935 (2013.01); H01J 37/32082 (2013.01); H01L 21/67069 (2013.01);
Abstract

A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.

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