The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2020

Filed:

Jul. 05, 2016
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Hyun Soo Jang, Daejeon, KR;

Dae Youn Kim, Daejeon, KR;

Jeong Ho Lee, Seoul, KR;

Young Hoon Kim, Cheonan-si, KR;

Seung Seob Lee, Seoul, KR;

Woo Chan Kim, Daejeon, KR;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/44 (2006.01); C23C 16/509 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4412 (2013.01); C23C 16/45508 (2013.01); C23C 16/45536 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); C23C 16/509 (2013.01); H01L 21/67017 (2013.01);
Abstract

A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. The reaction chamber provides a reaction space and the gas discharge path from which unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.


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