The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Nov. 07, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Guowei Zhang, Singapore, SG;
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Abstract
A high voltage device may include a substrate, source and drain regions, a gate structure and an oxide layer. The substrate may include a recessed region with a recessed surface lower than a top surface of the substrate. The source and drain regions may be at least partially arranged within the substrate under the recessed surface and top surface respectively. The drain region may be positioned higher than the source region. The gate structure may include first and second portions arranged over the recessed region. The first and second portions may be nearer to the source and drain regions respectively. The oxide layer may include a first part between the first portion of the gate structure and the recessed surface, and a second part between the second portion of the gate structure and the recessed surface. The second part of the oxide layer may be thicker than the first part.