The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2020
Filed:
Aug. 06, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Wei-Cheng Wu, Hsinchu County, TW;
Ya-Chen Kao, Taoyuan County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11568 (2017.01); H01L 29/66 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/66545 (2013.01); H01L 21/823842 (2013.01); H01L 29/42368 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming a split gate stack having a main gate and a select gate and forming a logic gate stack having a logic gate over a semiconductor substrate. The main gate and the logic gate is respectively replaced with a metal memory gate and a metal logic gate, in which the main gate and the logic gate are replaced simultaneously.