The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2020

Filed:

Dec. 17, 2018
Applicant:

Spin Memory, Inc., Fremont, CA (US);

Inventor:

Satoru Araki, San Jose, CA (US);

Assignee:

SPIN MEMORY, INC., Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic storage device includes a plurality of first wires extending along a first direction and a plurality of second wires extending along a second direction different from the first direction. The plurality of second wires form a grid with the plurality of first wires. The magnetic storage device further includes a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) devices. Each of the plurality of SOT-MRAM devices is disposed at a respective position on the grid. The magnetic storage device further includes write circuitry, including a transistor coupled to each respective first wire of the plurality of first wires, to apply a first write current along the respective first wire in the first direction, and readout circuitry to read a data value stored by a respective SOT-MRAM device.


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