The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Oct. 24, 2017
Globalfoundries Inc., Grand Cayman, KY;
Ruilong Xie, Niskayuna, NY (US);
Youngtag Woo, San Ramon, CA (US);
Daniel Chanemougame, Niskayuna, NY (US);
Bipul C. Paul, Mechanicville, NY (US);
Lars W. Liebmann, Mechanicville, NY (US);
Heimanu Niebojewski, Cohoes, NY (US);
Xuelian Zhu, San Jose, CA (US);
Lei Sun, Altamont, NY (US);
Hui Zang, Guilderland, NM (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One illustrative method disclosed includes, among other things, selectively forming a gate-to-source/drain (GSD) contact opening and a CB gate contact opening in at least one layer of insulating material and forming an initial gate-to-source/drain (GSD) contact structure and an initial CB gate contact structure in their respective openings, wherein an upper surface of each of the GSD contact structure and the CB gate contact structure is positioned at a first level, and performing a recess etching process on the initial GSD contact structure and the initial CB gate contact structure to form a recessed GSD contact structure and a recessed CB gate contact structure, wherein a recessed upper surface of each of these recessed contact structures is positioned at a second level that is below the first level.