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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10651278 B1

PDFFull Text
Date of Patent:
May. 12, 2020

Filed:

Jun. 13, 2016

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Inventors:

Takeo Furuhata, Tokyo, JP;

Tomohiro Shinagawa, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Chiyoda-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Selim U Ahmed

Assistant Examiner:

Evan G Clinton

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/27 (2006.01); H01L 23/552 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1602 (2013.01); C23C 16/271 (2013.01); C23C 16/274 (2013.01); C23C 16/303 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02494 (2013.01); H01L 21/02527 (2013.01); H01L 23/367 (2013.01); H01L 23/3732 (2013.01); H01L 23/552 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 21/02658 (2013.01); H01L 29/778 (2013.01);
Abstract

An object is to provide a technology capable of suppressing a crack of a crystalline nitride layer which is generated due to a stress caused by difference in thermal expansion coefficients between a crystalline nitride and diamond. A semiconductor device includes a crystalline nitride layer, a structure containing silicon, and a diamond layer. The structure is disposed on a first main surface of the crystalline nitride layer. The diamond layer is disposed at least on a lateral portion of the structure and has a void between the diamond layer and the first main surface of the crystalline nitride layer. The void is a stress absorbing space, for example.

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