The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Jun. 18, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Richard Fastow, Cupertino, CA (US);

Khaled Hasnat, San Jose, CA (US);

Prashant Majhi, San Jose, CA (US);

Owen Jungroth, Sonora, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11548 (2017.01); H01L 27/11556 (2017.01); H01L 25/065 (2006.01); G11C 16/08 (2006.01); H01L 23/00 (2006.01); G11C 16/04 (2006.01); H01L 27/11573 (2017.01); H01L 27/06 (2006.01); H01L 27/11575 (2017.01); H01L 27/11582 (2017.01); H01L 25/00 (2006.01); G11C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 24/02 (2013.01); H01L 24/73 (2013.01); H01L 25/0652 (2013.01); H01L 27/0688 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); G11C 5/025 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 25/50 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/80895 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06562 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/1438 (2013.01);
Abstract

Wafer-to-wafer bonding is used to form three-dimensional (3D) memory components such as 3D NAND flash memory with shared control circuitry on one die to access arrays on multiple dies. In one example, a non-volatile storage device includes a first die including a 3D array of non-volatile storage cells and CMOS (complementary metal oxide semiconductor) circuitry. A second die including a second 3D array of non-volatile storage cells is vertically stacked and bonded with the first die. At least a portion of the CMOS circuitry of the first die to access both the first 3D array of non-volatile storage cells of the first die and the second 3D array of non-volatile storage cells of the second die.


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