The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Mar. 01, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Jeffrey Gelorme, Burlington, CT (US);
Li-Wen Hung, Mahopac, NY (US);
John U. Knickerbocker, Monroe, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76898 (2013.01); H01L 24/83 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/83855 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/3512 (2013.01);
Abstract
A method of manufacturing a multi-layer wafer is provided. At least one stress compensating polymer layer is applied to at least one of two heterogeneous wafers. The stress compensating polymer layer is low temperature bonded to the other of the two heterogeneous wafers to form a multi-layer wafer pair. Channels are created between die on at least one of the two heterogeneous wafers. The channels are back filled with one of oxide or polymer to create a channel oxide deposition.