The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Apr. 03, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/36 (2006.01); H01L 23/528 (2006.01); H01L 23/492 (2006.01); H01L 21/304 (2006.01); H01L 21/50 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/304 (2013.01); H01L 21/50 (2013.01); H01L 21/78 (2013.01); H01L 23/36 (2013.01); H01L 23/492 (2013.01); H01L 23/5228 (2013.01); H01L 23/53228 (2013.01);
Abstract
Implementations of semiconductor packages may include: a prefabricated electrically conductive section; two or more metal oxide semiconductor field effect transistors (MOSFET) physically coupled together; and a back metal coupled to the two or more MOSFETs; wherein the electrically conductive section may be coupled to the back metal and may be configured to electrically couple the two or more MOSFETs together during operation of the two or more MOSFETs.