The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Aug. 30, 2018
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Sampath Purushothaman, Armonk, NY (US);
Roy Rongqing Yu, Armonk, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 23/544 (2006.01); H01L 25/00 (2006.01); H01L 29/06 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/304 (2013.01); H01L 21/30604 (2013.01); H01L 21/7684 (2013.01); H01L 21/76251 (2013.01); H01L 21/76256 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 21/84 (2013.01); H01L 23/5226 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/81 (2013.01); H01L 24/89 (2013.01); H01L 24/92 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0688 (2013.01); H01L 27/1203 (2013.01); H01L 27/1207 (2013.01); H01L 29/0649 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 2221/68372 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/03 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/8109 (2013.01); H01L 2224/81065 (2013.01); H01L 2224/81075 (2013.01); H01L 2224/81093 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81201 (2013.01); H01L 2224/81209 (2013.01); H01L 2224/9202 (2013.01); H01L 2224/94 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1461 (2013.01);
Abstract
A process includes forming through vias needed to connect a bottom device layer in a bottom silicon wafer to the one in the top device layer in a top silicon wafer including a silicon-on-insulator (SOI) wafer. Through vias are disposed in such a way that they extend from the middle of the line (MOL) interconnect of the top wafer to the buried oxide (BOX) layer of the SOI wafer with appropriate insulation provided to isolate them from the SOI device layer. A resultant article of manufacture is also disclosed.