The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2020

Filed:

Aug. 06, 2018
Applicants:

Kyushu University, National University Corporation, Fukuoka, JP;

Gigaphoton Inc., Tochigi, JP;

Inventors:

Hiroshi Ikenoue, Fukuoka, JP;

Tomoyuki Ohkubo, Oyama, JP;

Osamu Wakabayashi, Oyama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); B23K 26/03 (2006.01); B23K 26/066 (2014.01); B23K 26/06 (2014.01); B23K 26/08 (2014.01); H01L 21/02 (2006.01); B23K 26/354 (2014.01); H01L 21/268 (2006.01); B23K 26/064 (2014.01); B23K 26/073 (2006.01); H01L 21/263 (2006.01); B23K 103/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/324 (2013.01); B23K 26/032 (2013.01); B23K 26/034 (2013.01); B23K 26/064 (2015.10); B23K 26/0604 (2013.01); B23K 26/066 (2015.10); B23K 26/0608 (2013.01); B23K 26/0643 (2013.01); B23K 26/0648 (2013.01); B23K 26/0738 (2013.01); B23K 26/0861 (2013.01); B23K 26/354 (2015.10); H01L 21/02356 (2013.01); H01L 21/02422 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02683 (2013.01); H01L 21/02686 (2013.01); H01L 21/02691 (2013.01); H01L 21/268 (2013.01); H01L 21/2636 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); H01L 21/0268 (2013.01); H01L 21/02678 (2013.01);
Abstract

A laser annealing device includes: a CW laser device configured to emit continuous wave laser light caused by continuous oscillation to preheat the amorphous silicon; a pulse laser device configured to emit the pulse laser light toward the preheated amorphous silicon; an optical system configured to guide the continuous wave laser light and the pulse laser light to the amorphous silicon; and a control unit configured to control an irradiation energy density of the continuous wave laser light so as to preheat the amorphous silicon to have a predetermined target temperature less than a melting point thereof, and configured to control at least one of a fluence and a number of pulses of the pulse laser light so as to crystallize the preheated amorphous silicon.


Find Patent Forward Citations

Loading…