The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2020
Filed:
Nov. 24, 2019
Applicant:
Microsemi Soc Corp., San Jose, CA (US);
Inventor:
John L. McCollum, Orem, UT (US);
Assignee:
Microsemi SoC Corp., Chandler, AZ (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 5/063 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0011 (2013.01); G11C 13/0028 (2013.01); G11C 13/0064 (2013.01); G11C 13/0097 (2013.01); H01L 27/2436 (2013.01); H01L 27/2454 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0071 (2013.01); G11C 2013/0073 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/82 (2013.01);
Abstract
A method for programming a ReRAM cell including a ReRAM device connected in series with an access transistor includes biasing the ReRAM cell with a programming potential that configures the access transistor in a common-source configuration and applying at least one programming voltage pulse to a gate of the access transistor, the programming voltage pulse having a magnitude selected to limit programming current to a preselected value.