The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Nov. 13, 2018
Nxp Usa, Inc., Austin, TX (US);
Moaniss Zitouni, Gilbert, AZ (US);
Vishnu Khemka, Chandler, AZ (US);
Ganming Qin, Chandler, AZ (US);
Tanuj Saxena, Chandler, AZ (US);
Raghuveer Vankayala Gupta, Austin, TX (US);
Mark Edward Gibson, Austin, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A vertical bi-directional device includes first and second conductive gates in a semiconductor layer with a first vertical gate oxide on a sidewall of the first conductive gate and a second vertical gate oxide on a sidewall of the second conductive gate. A first heavily doped region of a first conductivity type is at the surface adjacent the first conductive gate, and a second heavily doped region of the first conductive type is at the surface adjacent to the second conductive gate. Doped regions of the first conductivity type extend below the conductive gates towards a substrate. A doped region of a second conductivity type extends laterally from the first vertical gate oxide to the second vertical gate oxide, and a heavily doped region of the second conductivity type is at the surface of the semiconductor layer, between the first and second heavily doped regions of the first conductivity type.