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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10644000 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

Nov. 19, 2018

Semiconductor device having deep wells

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Meng-Han Lin, Hsinchu, TW;

Chih-Ren Hsieh, Changhua, TW;

Chen-Chin Liu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Shouxiang Hu

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/092 (2006.01); H01L 27/11546 (2017.01); H01L 27/11526 (2017.01); H01L 27/11575 (2017.01); H01L 29/10 (2006.01); H01L 21/266 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0928 (2013.01); H01L 21/266 (2013.01); H01L 21/761 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0922 (2013.01); H01L 27/11526 (2013.01); H01L 27/11546 (2013.01); H01L 27/11575 (2013.01); H01L 29/1083 (2013.01);
Abstract

A semiconductor device includes first and second voltage device regions and a deep well common to the first and second voltage device regions. An operation voltage of electronic devices in the second voltage device region is higher than that of electronic devices in the first voltage device region. The deep well has a first conductivity type. The first voltage device region includes a first well having the second conductivity type and a second well having the first conductivity type. The second voltage region includes a third well having a second conductivity type and a fourth well having the first conductivity type. A second deep well having the second conductivity type is formed below the fourth well. The first, second and third wells are in contact with the first deep well, and the fourth well is separated by the second deep well from the first deep well.

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