The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Nov. 16, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Steven Shank, Jericho, VT (US);
Ian McCallum-Cook, Burlington, VT (US);
John Hall, Glen Allen, VA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 23/66 (2006.01); H01L 21/768 (2006.01); H01L 21/764 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/764 (2013.01); H01L 21/76898 (2013.01); H01L 23/66 (2013.01); H01L 29/0649 (2013.01); H01L 2223/6616 (2013.01);
Abstract
Through-substrate vias (TSVs) extend through a high resistivity semiconductor substrate laterally spaced and isolated from an active device formed over the substrate by deep trench isolation (DTI) structures. The deep trench isolation structures may extend partially or entirely through the substrate, and may include an air gap. The deep trench isolation structures entirely surround the active device and the TSVs.