logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10643852 B1

PDFFull Text
Date of Patent:
May. 05, 2020

Filed:

Sep. 19, 2017

Process of forming an electronic device including exposing a substrate to an oxidizing ambient

Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Peter A. Burke, Portland, OR (US);

James Kimball, Boring, OR (US);

Gordon M. Grivna, Mesa, AZ (US);

Assignee:

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);

Attorney:

Abel Schillinger, LLP

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/265 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/788 (2006.01); H01L 21/306 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28114 (2013.01); H01L 21/02236 (2013.01); H01L 21/2658 (2013.01); H01L 21/26506 (2013.01); H01L 21/26533 (2013.01); H01L 21/26586 (2013.01); H01L 21/30604 (2013.01); H01L 29/407 (2013.01); H01L 29/417 (2013.01); H01L 29/4236 (2013.01); H01L 29/42336 (2013.01); H01L 29/66348 (2013.01); H01L 29/66825 (2013.01); H01L 29/7397 (2013.01); H01L 29/7889 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01);
Abstract

A process of forming electronic device can include providing a substrate having a first portion and a second portion; introducing a nitrogen-containing species into the second portion of the substrate; and exposing the substrate to an oxidizing ambient, wherein a thicker oxide is grown from the first portion as compared to the second portion. In an embodiment, the process can include removing the first portion while the second portion of the substrate that includes the nitrogen-containing species remains. In another embodiment, the process can be used to form different thicknesses of an oxide layer at different portions along a sidewall of a trench. The process may be used in other applications where different thicknesses of oxide layers are to be formed during the same oxidation cycle, such as forming a tunnel dielectric layer and a gate dielectric layer for a floating gate memory cell.

Find Patent Forward Citations

Loading…