The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 06, 2018
Applicant:
Spin Memory, Inc., Fremont, CA (US);
Inventors:
Mustafa Pinarbasi, Morgan Hill, CA (US);
Bartek Kardasz, Pleasanton, CA (US);
Assignee:
Spin Memory, Inc., Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11C 11/15 (2006.01); H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/15 (2013.01); H01F 10/3286 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 27/224 (2013.01);
Abstract
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.