The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2020

Filed:

Oct. 22, 2015
Applicant:

Inpria Corporation, Corvallis, OR (US);

Inventors:

Stephen T. Meyers, Corvallis, OR (US);

Jeremy T. Anderson, Corvallis, OR (US);

Joseph Burton Edson, Corvallis, OR (US);

Kai Jiang, Corvallis, OR (US);

Douglas A. Keszler, Corvallis, OR (US);

Michael K. Kocsis, San Francisco, CA (US);

Alan J. Telecky, Albany, OR (US);

Brian J. Cardineau, Corvallis, OR (US);

Assignee:

Inpria Corporation, Corvallis, OR (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/32 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); G03F 7/0043 (2013.01); G03F 7/2004 (2013.01); G03F 7/32 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01);
Abstract

Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.


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