The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Apr. 23, 2018
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ravi Pramod Kumar Vedula, San Diego, CA (US);

Sinan Goktepeli, San Diego, CA (US);

George Pete Imthurn, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/195 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 21/84 (2006.01); H03F 3/24 (2006.01); H01L 23/66 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H03F 1/26 (2006.01); H03F 3/193 (2006.01);
U.S. Cl.
CPC ...
H03F 3/195 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 27/092 (2013.01); H01L 27/1203 (2013.01); H01L 29/0642 (2013.01); H01L 29/41733 (2013.01); H01L 29/78615 (2013.01); H03F 1/26 (2013.01); H03F 3/193 (2013.01); H03F 3/245 (2013.01);
Abstract

A radio frequency integrated circuit (RFIC) includes multi-finger transistors including discrete diffusion regions and interconnected within a reconfigured form factor as a single switch transistor. The RFIC also includes a source bus having a first plurality of source fingers coupled to each source region of the multi-finger transistors and a second plurality of source fingers orthogonally coupled to the first plurality of source fingers. The second plurality of source fingers couple the discrete diffusion regions in parallel. The RFIC also includes a drain bus having a first plurality of drain fingers coupled to each drain region of the multi-finger transistors and a second plurality of drain fingers orthogonally coupled to the first plurality of drain fingers. The second plurality of drain fingers electrically couple the discrete diffusion regions in parallel. The RFIC further includes a plurality of interconnected body contacts to bias a body of each of the multi-finger transistors.


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