The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Mar. 09, 2015
Applicant:
Toshiba Mitsubishi-electric Industrial Systems Corporation, Chuo-ku, JP;
Inventors:
Takahiro Hiramatsu, Tokyo, JP;
Hiroyuki Orita, Tokyo, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 31/20 (2006.01); H01L 39/24 (2006.01); H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 21/28 (2006.01); H01L 23/31 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02161 (2013.01); H01L 31/0216 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01); H01L 21/02694 (2013.01); H01L 21/28247 (2013.01); H01L 21/30655 (2013.01); H01L 21/324 (2013.01); H01L 21/6708 (2013.01); H01L 21/67051 (2013.01); H01L 21/76825 (2013.01); H01L 21/76862 (2013.01); H01L 23/3171 (2013.01); H01L 27/1285 (2013.01); H01L 31/186 (2013.01); H01L 31/1864 (2013.01); H01L 31/1868 (2013.01); H01L 31/208 (2013.01); H01L 33/0095 (2013.01); H01L 33/44 (2013.01); H01L 39/247 (2013.01); H01L 2224/80048 (2013.01); Y02E 10/547 (2013.01);
Abstract
In the present invention, a p-type silicon substrate is produced, a solution containing aluminum is misted, and the misted solution is sprayed onto the back surface of the p-type silicon substrate under non-vacuum to form a back surface passivation film made of the aluminum oxide film on the back surface of the p-type silicon substrate. Thereafter, a light irradiation processing in which an interface between the p-type silicon substrate and the back surface passivation film is irradiated with ultraviolet light is performed.