The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
Nov. 22, 2017
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Wei Lin, Jhubei, TW;
Tsung-Han Lin, Hsinchu, TW;
Chao-Wei Wu, Changhua, TW;
Yen-Kai Chen, Taoyuan, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is provided. In the method, a gate structure is formed on a semiconductor substrate. A photolithography process is performed with a mask having two transparent regions to form a photoresist layer having two openings in the semiconductor substrate. A first photoresist layer of the photoresist layer between the two openings is aligned to the gate structure and formed on the gate structure. The width of the first photoresist layer is shorter than the width of the gate structure such that a first side portion and a second side portion of the gate structure are exposed from both sides of the first photoresist layer, respectively. Next, an ion implantation process is performed to form lightly doped drain regions in the semiconductor substrate which are on two opposite sides of the gate structure of the photoresist layer.