The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Aug. 02, 2017
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Kazuaki Takesako, Kanagawa, JP;

Kazutaka Manabe, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/108 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/10826 (2013.01); H01L 27/10876 (2013.01); H01L 27/10879 (2013.01); H01L 27/10891 (2013.01); H01L 27/1211 (2013.01); H01L 29/41791 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7856 (2013.01);
Abstract

A dynamic random access memory and a method of fabricating the same are provided. The dynamic random access memory includes a substrate, an isolation structure, a buried word line structure, and a plurality of a first fin structures. The isolation structure is disposed in the substrate and defines a plurality of active regions arranged in a column in a first direction. The buried word line structure is located in the substrate and extended along the first direction and across the plurality of active regions and the isolation structure. The plurality of first fin structures is located in an intersecting region of the plurality of active regions and the buried word line structure, arranged in a column along the first direction, and surrounded and covered by the buried word line structure.


Find Patent Forward Citations

Takesako, Kazuaki. (2020). Dynamic random access memory and method of fabricating the same (U.S. Patent No. 10636796). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10636796

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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