The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2020
Filed:
May. 02, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Hsiao-Pang Chou, Taipei, TW;
Yu-Ru Yang, Hsinchu County, TW;
Chih-Chien Liu, Taipei, TW;
Chao-Ching Hsieh, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A magnetic tunnel junction (MTJ) structure of a magnetic random access memory (MRAM) cell includes an insulation layer, a patterned MTJ film stack, an aluminum oxide protection layer, an interlayer dielectric, and a connection structure. The patterned MTJ film stack is disposed on the insulation layer. The aluminum oxide protection layer is disposed on a sidewall of the patterned MTJ film stack, and the aluminum oxide protection layer includes an aluminum film oxidized by an oxidation treatment. The interlayer dielectric covers the aluminum oxide protection layer and the patterned MTJ film stack. The connection structure penetrates the interlayer dielectric above the patterned MTJ film stack, and the connection structure is electrically connected to a topmost portion of the patterned MTJ film stack.