The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Nov. 29, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yifei Wang, Sunnyvale, CA (US);

Kurtis Leschkies, San Jose, CA (US);

Fei Wang, Fremont, CA (US);

Xin Liu, Fremont, CA (US);

Wei Tang, Santa Clara, CA (US);

Yixiong Yang, San Jose, CA (US);

Wenyi Liu, Santa Clara, CA (US);

Ludovic Godet, Sunnyvale, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76882 (2013.01); H01L 21/02244 (2013.01); H01L 21/76846 (2013.01); H01L 21/76883 (2013.01); H01L 21/76888 (2013.01); H01L 21/28079 (2013.01); H01L 21/28088 (2013.01); H01L 21/28097 (2013.01); H01L 21/7685 (2013.01);
Abstract

The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400° C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.


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