The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Dec. 20, 2018
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Reza Ghandi, Niskayuna, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Peter Almern Losee, Clifton Park, NY (US);

David Alan Lilienfeld, Niskayuna, NY (US);

Assignee:

GENERAL ELECTRIC COMPANY, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0465 (2013.01); H01L 29/0634 (2013.01);
Abstract

To manufacture a super-junction (SJ) layer of a SJ device, an epitaxial (epi) layer having a first conductivity type may be formed on an underlying layer, which may be formed from a wide-bandgap material. A first mask may then be formed onto a first portion of the epi layer, and a first set of SJ pillars may be selectively implanted into a second portion of the epi layer exposed by the first mask. Then, a second mask may be formed on the second portion of the epi layer that is self-aligned relative to the first mask. After removing the first mask, a second set of SJ pillars may be selectively implanted into the first portion of the epi layer. Removing the second mask may then yield the SJ layer.


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