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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10636633 B1

PDFFull Text
Date of Patent:
Apr. 28, 2020

Filed:

Apr. 14, 2015

Sputtering target and process for production thereof

Applicants:

Tanaka Kikinzoku Kogyo K.k., Chiyoda-ku, Tokyo, JP;

Tohoku University, Sendai, Miyagi, JP;

Inventors:

Kim Kong Tham, Tsukuba, JP;

Toshiya Yamamoto, Tsukuba, JP;

Shin Saito, Sendai, JP;

Shintaro Hinata, Sendai, JP;

Migaku Takahashi, Sendai, JP;

Assignees:

TANAKA KIKINZOKU KOGYO K.K., Tokyo, JP;

TOHOKU UNIVERSITY, Miyagi, JP;

Attorneys:

Orrick, Herrington & Sutcliffe LLP

Joseph A. Calvaruso

K. Patrick Herman

Primary Examiner:

Jason Berman

Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); C22C 5/04 (2006.01); C22C 19/07 (2006.01); C22C 1/05 (2006.01); C04B 35/00 (2006.01); C22F 1/14 (2006.01); C22F 1/10 (2006.01); C23C 14/58 (2006.01); C23C 14/06 (2006.01); C22C 1/10 (2006.01); C22C 1/04 (2006.01); C23C 14/14 (2006.01); C23C 14/08 (2006.01); B22F 3/14 (2006.01); B22F 9/04 (2006.01); B22F 9/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3429 (2013.01); C04B 35/00 (2013.01); C22C 1/0466 (2013.01); C22C 1/05 (2013.01); C22C 1/1084 (2013.01); C22C 5/04 (2013.01); C22C 19/07 (2013.01); C22F 1/10 (2013.01); C22F 1/14 (2013.01); C23C 14/0688 (2013.01); C23C 14/083 (2013.01); C23C 14/14 (2013.01); C23C 14/3414 (2013.01); C23C 14/5806 (2013.01); H01J 37/3426 (2013.01); B22F 3/14 (2013.01); B22F 9/04 (2013.01); B22F 9/082 (2013.01); B22F 2301/15 (2013.01); B22F 2301/25 (2013.01); B22F 2302/25 (2013.01); B22F 2998/10 (2013.01); B22F 2999/00 (2013.01);
Abstract

Provided is a sputtering target with which it is possible to form a magnetic thin film having a high coercive force Hc and a process for production thereof. The sputtering target is a sputtering target comprising metallic Co, metallic Pt, and an oxide, wherein the sputtering target does not contain metallic Cr, and the oxide is WOand wherein the sputtering target comprises 25 to 50 at % of metallic Co relative to a total of metallic Co and metallic Pt.

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