The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2020

Filed:

Jul. 25, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Yi-Chun Shih, Taipei, TW;

Po-Hao Lee, Hsinchu, TW;

Chia-Fu Lee, Hsinchu, TW;

Yu-Der Chih, Hsinchu, TW;

Yu-Lin Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 29/00 (2006.01); G11C 29/44 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G11C 29/808 (2013.01); G06F 12/0292 (2013.01); G11C 29/44 (2013.01); G11C 29/765 (2013.01); G11C 29/787 (2013.01); G11C 29/846 (2013.01);
Abstract

Memory devices and methods of repairing a memory are provided. A first array includes normal memory cells, and a second array includes repair memory cells. The repair memory cells are configured to be used in place of the normal memory cells. A look-up table comprises memory bitcells configured to store a set of entries including addresses of defective memory cells of the normal memory cells. A match circuit is configured to evaluate whether an input memory address is stored as a defective address in the memory bitcells. The match circuit is also configured to generate a selection signal for selecting the normal memory cells or the repair memory cells based on the evaluation.


Find Patent Forward Citations

Loading…