Semiconductor memory device error correction circuit, semiconductor memory device including the same, and memory system including the same

Abstract

An error correction circuit of a semiconductor memory device including a memory cell array includes an error correction code (ECC) memory that stores an ECC and an ECC engine. The ECC is represented by a generation matrix. The ECC engine generates first parity data based on main data using the ECC, and corrects at least one error bit in the main data read from the memory cell array using the first parity data. The main data includes a plurality of data bits divided into a plurality of sub codeword groups. The ECC includes a plurality of column vectors divided into a plurality of code groups corresponding to the sub codeword groups. The column vectors have elements configured to restrict a location of a sub codeword group in which a mis-corrected bit occurs, in which the mis-corrected bit is generated due to error bits in the main data.