The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Jan. 03, 2019
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Chen-Wei Pan, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/739 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/76229 (2013.01); H01L 29/0657 (2013.01); H01L 29/0808 (2013.01); H01L 29/1008 (2013.01); H01L 29/36 (2013.01); H01L 29/66325 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01); H01L 29/0821 (2013.01);
Abstract
A method for fabricating bipolar junction transistor (BJT) includes the steps of: providing a substrate having an emitter region, a base region, and a collector region; performing a first implantation process to form a first well region in the base region; and performing a second implantation process to form a second well region in the emitter region. Preferably, the first well region and the second well region comprise different concentration.