The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Apr. 20, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, trench isolations, a sacrificial layer, a first resist protect oxide (RPO) layer, a second RPO layer and a silicide layer. The semiconductor substrate has first portions and second portions which are alternately disposed, and each of the second portions includes a first resist region with a first resistance, a second resist region with a second resistance and a silicide region. The second resistance is greater than the first resistance. The trench isolations are in the first portions. The sacrificial layer is on the first resist region. The first RPO layer is on the sacrificial layer. The first RPO layer together with the sacrificial layer have a first thickness. The second RPO layer is on the second resist region, in which the second RPO layer has a second thickness smaller than the first thickness. The silicide layer is on the silicide region.