The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Feb. 05, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Inventor:
Hsiang-Wei Lin, New Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 21/764 (2006.01); H01L 23/522 (2006.01); H01L 21/3105 (2006.01); H01L 23/485 (2006.01); H01L 23/00 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/67063 (2013.01); H01L 21/67115 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 21/76802 (2013.01); H01L 21/76825 (2013.01); H01L 21/76843 (2013.01); H01L 23/485 (2013.01); H01L 23/522 (2013.01); H01L 23/528 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 23/5329 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 23/564 (2013.01);
Abstract
A semiconductor structure includes a first dielectric layer disposed over a substrate; a first metal feature and a second metal feature embedded in the first dielectric layer and spaced from each other; an etch stop layer disposed between the first and second metal features and on sidewalls of the first dielectric layer; a second dielectric layer disposed over the etch stop layer and between the first and second metal features; and an air gap surrounded by the second dielectric layer and disposed between the first and second metal features.