The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Nov. 15, 2017
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Hong He, Schenectady, NY (US);

Juntao Li, Cohoes, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/775 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02488 (2013.01); H01L 21/02521 (2013.01); H01L 21/02601 (2013.01); H01L 21/02603 (2013.01); H01L 21/02667 (2013.01); H01L 21/31111 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/1054 (2013.01); H01L 29/1079 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/775 (2013.01); H01L 29/78603 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01); H01L 29/42392 (2013.01);
Abstract

A dense array of semiconductor single crystalline semiconductor nanocrystals is provided in the present application by forming an amorphous semiconductor material layer surrounding a plurality of patterned nanostructures comprised of a single crystalline semiconductor material portion. A thermal anneal, i.e., (solid phase epitaxy), is then performed to crystallize a portion of the amorphous semiconductor material layer that is in contact with each single crystalline semiconductor material portion and to provide a plurality of spaced apart single crystalline nanocrystals on a surface of an insulator. A remaining portion of the amorphous semiconductor material layer that was not crystallized is thereafter removed.


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