The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Oct. 17, 2018
Applicant:

Ansys, Inc., Canonsburg, PA (US);

Inventors:

Renuka Vanukuri, Cupertino, CA (US);

Ajay Singh Bisht, San Jose, CA (US);

Allen Baker, San Jose, CA (US);

Assignee:

Ansys, Inc., Canonsburg, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5045 (2013.01); G06F 2217/78 (2013.01);
Abstract

Systems and methods are provided for calculating a power characteristic of an integrated circuit design. For each standard cell of a gate-level netlist, a path length and a set of attributes are computed. For each leaf-level instance of a register-transfer level (RTL) netlist, a path length and a set of attributes are computed. The standard cells are partitioned into first subsets, each of the first subsets containing standard cells with a same path length and a same set of attributes. For each first subset, a relative percentage for each type of standard cell included in the first subset is calculated. The leaf-level instances are partitioned into second subsets. For each pair of corresponding first and second subsets, standard cells are associated with the leaf-level instances of the second subset based on the relative percentages. A power characteristic of the RTL netlist is calculated based on the associated standard cells.


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