The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Nov. 15, 2018
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Chengwei Tang, Shanghai, CN;
Xin Wang, Shanghai, CN;
Abstract
A bias current circuit which includes: a main unit including first PMOS and NMOS transistors constituting a first current path, and second PMOS and NMOS transistors constituting a second current path together with a first resistor; an output unit; and a supply voltage adapting unit including a third MOS transistor, a pull-up current source and a pull-down current source. The third MOS transistor is connected between a first node to which gates of the first and second PMOS transistors are connected and a second node to which drains of the second NMOS and PMOS transistors are connected. The pull-up current source is mirrored to the first PMOS transistor and configured to provide a current equal to a current provided by the pull-down current source. The bias current circuit has an operating voltage range encompassing low-voltage band such that it is operable at high and low voltages.