The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Apr. 12, 2017
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Irene Ament, Aalen, DE;

Moritz Becker, Aalen, DE;

Assignee:

CARL ZEISS SMT GMBH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 1/42 (2006.01); G01N 21/41 (2006.01); G01N 21/94 (2006.01); G01J 1/02 (2006.01); G01B 11/06 (2006.01); G01N 21/552 (2014.01); G03F 7/20 (2006.01); B82Y 10/00 (2011.01); G21K 1/06 (2006.01); G01N 21/95 (2006.01); G01N 21/47 (2006.01);
U.S. Cl.
CPC ...
G01B 11/0616 (2013.01); B82Y 10/00 (2013.01); G01J 1/0238 (2013.01); G01J 1/429 (2013.01); G01N 21/41 (2013.01); G01N 21/554 (2013.01); G01N 21/94 (2013.01); G03F 7/7085 (2013.01); G03F 7/70591 (2013.01); G03F 7/70916 (2013.01); G03F 7/70958 (2013.01); G21K 1/062 (2013.01); G01N 21/4785 (2013.01); G01N 2021/9511 (2013.01);
Abstract

The invention relates to a method for determining the thickness of a contaminating layer and/or the type of a contaminating material on a surface () in an optical system, in particular on a surface () in an EUV lithography system, comprising: irradiating the surface () on which plasmonic nanoparticles () are formed with measurement radiation (), detecting the measurement radiation () scattered at the plasmonic nanoparticles (), and determining the thickness of the contaminating layer and/or the type of the contaminating material on the basis of the detected measurement radiation (). The invention also relates to an optical element () for reflecting EUV radiation (), and to an EUV lithography system.


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