The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Aug. 25, 2017
Applicant:
Synopsys, Inc., Mountain View, CA (US);
Inventor:
Larry Wang, San Jose, CA (US);
Assignee:
Synopsys, Inc., Mountain View, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/00 (2006.01); H04L 9/32 (2006.01); G11C 17/14 (2006.01); G06F 21/72 (2013.01); G11C 17/18 (2006.01); G06F 21/73 (2013.01); G11C 7/24 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H04L 9/3278 (2013.01); G06F 21/72 (2013.01); G06F 21/73 (2013.01); G11C 7/24 (2013.01); G11C 17/146 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H04L 2209/12 (2013.01);
Abstract
Gate oxide breakdown in the programming element of an OTP (One-Time Programmable) memory cell can vary widely. The resulting large variations in the conductivity of the programmed memory cells in an OTP memory cell array is used for a PUF (Physically Unclonable Function). A method of obtaining a PUF value from an OTP memory cell array is described.