The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Mar. 18, 2015
Applicant:
Specmat, Inc., North Olmsted, OH (US);
Inventors:
Horia M. Faur, Medina, OH (US);
Maria Faur, North Olmsted, OH (US);
Assignee:
SPECMAT, Inc., North Olmsted, OH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 31/18 (2006.01); B05D 3/02 (2006.01); H05K 3/28 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02168 (2013.01); H01L 21/02164 (2013.01); H01L 21/02282 (2013.01); H01L 21/30604 (2013.01); H01L 31/02167 (2013.01); H01L 31/1804 (2013.01); H01L 31/1868 (2013.01); B05D 3/0209 (2013.01); H05K 3/28 (2013.01); H05K 3/4673 (2013.01); Y02E 10/50 (2013.01);
Abstract
This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various substrates. The invention further relates to RTWCG method and process suited to grow thin films on the Si substrates used in the manufacture of silicon-based electronic and photonic (optoelectronic) device applications. The invention further relates to processes used to produce SiOX thin film layers for use as passivation layers, low reflectance layers, or high reflectance single layer coatings (SLARC) and selective emitters (SE).