The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jan. 15, 2019
United Microelectronics Corp., Hsin-Chu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of a semiconductor device includes the following steps. Trenches are formed on a substrate, and the trenches are formed on a first region and a second region defined on the substrate. A barrier layer is formed conformally in the trenches. A first pull-down process is performed to the barrier layer on the second region. The barrier layer on the first region is covered by a first mask during the first pull-down process. A second pull-down process is performed to the barrier layer on the first region. The barrier layer on the second region is covered by a second mask during the second pull-down process. A proportion of an area of the trenches on the first region to an area of the first region is different from a proportion of an area of the trenches on the second region to an area of the second region.