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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622402 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Mar. 31, 2016

Semiconductor device

Applicant:

Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;

Inventors:

Noburo Hosokawa, Hamamatsu, JP;

Nao Inoue, Hamamatsu, JP;

Katsumi Shibayama, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:

Drinker Biddle & Reath LLP

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 27/146 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/103 (2006.01); H01L 31/107 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 21/3205 (2013.01); H01L 21/768 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/522 (2013.01); H01L 23/532 (2013.01); H01L 24/02 (2013.01); H01L 24/05 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 31/02005 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/103 (2013.01); H01L 31/107 (2013.01); H01L 24/13 (2013.01); H01L 31/0203 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02371 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/10126 (2013.01); H01L 2224/11 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate in which a through hole is formed, a first wiring, an insulating layer, and a second wiring that is electrically connected to the first wiring in an opening of the insulating layer. The insulating layer has a first curved portion that covers an inner surface of a through hole between a first opening and a second opening and a second curved portion that covers an edge of the second opening. A surface in the first curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole. The surface in the second curved portion is curved in a convex shape toward the side opposite the inner surface of the through hole.

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