The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Mar. 08, 2017
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Swarnal Borthakur, Boise, ID (US);

Vladimir Korobov, San Mateo, CA (US);

Marc Sulfridge, Boise, ID (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); H04N 5/335 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14618 (2013.01); H01L 21/76224 (2013.01); H01L 21/76898 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14687 (2013.01); H04N 5/335 (2013.01);
Abstract

An imaging system may include an image sensor package with through-oxide via connections between the image sensor die and the digital signal processing die in the image sensor package. The image sensor die and the digital signal processing die may be attached to each other. The through-oxide via may connect a bond pad on the image sensor die with metal routing paths in the image sensor and digital signal processing dies. The through-oxide via may simultaneously couple the image sensor die to the digital signal processing die. The through-oxide via may be formed through a shallow trench isolation structure in the image sensor die. The through-oxide via may be formed through selective etching of the image sensor and digital signal processing dies.


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