The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jan. 15, 2019
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Sheng-Huei Dai, Taitung County, TW;
Tzung-Lin Li, Hsinchu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/93 (2006.01); H01L 29/06 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0288 (2013.01); H01L 29/66136 (2013.01); H01L 29/66174 (2013.01); H01L 29/861 (2013.01); H01L 29/93 (2013.01); H01L 29/0692 (2013.01); H01L 29/66121 (2013.01); H01L 29/94 (2013.01);
Abstract
A method for fabricating a protection device includes forming a doped well with a first-type impurity in a substrate. A first semiconductor terminal with a second-type impurity is formed on the doped well. A second semiconductor terminal with a second-type impurity is formed on the doped well separating from the first semiconductor terminal. The first semiconductor terminal is connected to a voltage level and a second semiconductor terminal is connected to a ground voltage.