The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Feb. 25, 2016
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventor:

Masakazu Yatou, Kariya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); B32B 37/06 (2006.01); B32B 38/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); B32B 37/06 (2013.01); B32B 38/0008 (2013.01); H01L 21/762 (2013.01); B32B 2457/14 (2013.01);
Abstract

A substrate bonding method includes: preparing a first substrate having a first silicon oxide film with a film thickness of 50 nm or more arranged on the first substrate, and a second substrate having a second silicon oxide film arranged on the second substrate; bonding the first substrate and the second substrate together in a state where the first silicon oxide film and the second silicon oxide film face each other; and heating and bonding the first substrate and the second substrate. The preparing of the first substrate and the second substrate includes preparing the second substrate having the second silicon oxide film with a film thickness of 2.5 nm or less. The heating and bonding of the first substrate and the second substrate includes heating the first substrate and the second substrate at a temperature of 200° C. or more and 800° C. or less.


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