The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Dec. 28, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hung-Chang Yu, Hsin-chu, TW;

Ta-Ching Yeh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01); G11C 27/02 (2006.01);
U.S. Cl.
CPC ...
G11C 7/065 (2013.01); G11C 7/08 (2013.01); G11C 27/026 (2013.01);
Abstract

A sense amplifier includes a first sample and hold circuit, a second sample and hold circuit, a latch-type amplifier. The first sample and hold circuit is coupled to a bit line and configured to sample and hold memory cell data during a pre-charge phase of a sensing operation. The second sample and hold circuit is coupled to a reference bit line and configured to sample and hold data of a reference memory cell data during the pre-charge phase of the sensing operation. The latch-type amplifier, coupled to the first sample and hold circuit and the second sample and hold circuit, and configured to compare the memory cell data and the reference cell data during an evaluation phase of the sensing operation to output a sensing signal. The sense amplifier is isolated from the bit line and the reference bit line during the evaluation phase of the sensing operation. A sensing method adapted to a sense amplifier and a non-volatile memory include a sense amplifier are also introduced.


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